| PART |
Description |
Maker |
| NS15003 |
20 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
|
MICROSEMI CORP
|
| 2N3442 ON0039 |
Hlgh -Power lndustrlal Translsrors
From old datasheet system
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
|
Motorola, Inc.
ON Semi
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| STP25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STW2 |
From old datasheet system
N-CHANNEL Power MOSFET
N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET N沟道600V.140 - 20A型TO-220/FP/DAK/TO-247 MOSFET的第二代MDmesh
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| 1-350346-0 |
.240, .295" Centerline, 250 v, 28 A max. (.140" MATE-N-LOK); 03P .140 MNL PLUG P/M NAT ( AMP )
|
Tyco Electronics
|
| SF0140BA01990S |
140 MHz Filter 24 MHz Bandwidth
140 MHz Low Loss SAW Filters
|
API Technologies Corp
Integrated Circuit Systems
ICS
|
| APT5014B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| STS3C3F30L |
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFETII POWER MOSFET
N-CHANNEL 30V - 0.050 OHM -3.5A P-CHANNEL 30V - 0.140 OHM - 3A SO-8 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET⑩ II POWER MOSFET
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET?/a> II POWER MOSFET
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MP220-100-A MP220-100-B MP220-100-C MP220-100-D MP |
POWER FILM RESISTORS TO 140 WATT
|
RCD COMPONENTS INC.
|
| FSF9150R FSF9150D FN4089 FSF9150R4 FSF9150D1 FSF91 |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| BTS5231-2GS |
Smart High-Side Power Switch PROFET Two Channels, 140 m 惟
Smart High-Side Power Switch PROFET Two Channels, 140 m Ω
|
Infineon Technologies AG
|
